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FDC6331L
August 2001
April 2007
tm
FDC6331L
Integrated Load Switch
General Description This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 2.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) that drives a large P -Channel power MOSFET (Q2) in one tiny SuperSOTT M-6 package. Applications Load switch Power management
Features
-2.8 A, -8 V. RDS(ON) = 55 m @ V GS = -4.5 V RDS(ON) = 70 m @ V GS = -2.5 V RDS(ON) = 100 m @ V GS = -1.8 V Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6KV Human body model) High performance trench technology for extremely low RDS(ON)
D2 S1 D1
Vin,R1 ON/OFF
Q2
Equivalent Circuit
3 2
Q1
4 5 6
Vout,C1 IN Vout,C1 R2
+V - DROP
OUT
G2
SuperSOT Pin 1
TM
-6
S2 G1
R1,C1
1
See Application Circuit
ON/OFF
SuperSOTTM-6
Absolute Maximum Ratings
Symbol V IN V ON/OFF ILoad PD TJ , TSTG
TA=25oC unless otherwise noted
Parameter Maximum Input Voltage High level ON/OFF voltage range Load Current - Continuous - Pulsed Maximum Power Dissipation
(Note 1) (Note 1)
Ratings 8 -0.5 to 8 2.8 9 0.7 -55 to +150
Units V V A W C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R JA R JC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1) (Note 1)
180 60
C/W C/W
Package Marking and Ordering Information
Device Marking .331 Device FDC6331L Reel Size 7'' Tape width 8mm Quantity 3000 units
2007 Fairchild Semiconductor Corporation
FDC6331L Rev D
FDC6331L
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV IN ILoad IFL IRL Vin Breakdown Voltage Zero Gate Voltage Drain Current Leakage Current, Forward Leakage Current, Reverse
(Note 2)
V ON/OFF = 0 V, ID = -250 A V IN = 6.4 V, V ON/OFF = 0 V V ON/OFF = 0 V, V IN = 8 V V ON/OFF = 0 V, V IN = -8 V
8 -1 -100 100
V A nA nA
On Characteristics
V ON/OFF (th) RDS(on)
Gate Threshold Voltage Static Drain-Source On-Resistance (Q2) Static Drain-Source On-Resistance (Q1)
RDS(on)
V IN = V ON/OFF, ID = -250 A VGS = -4.5 V, ID = -2.8A ID = -2.5 A VGS = -2.5 V, ID = -2.0 A VGS = -1.8 V, VGS = 4.5 V, ID = 0.4A ID = 0.2 A VGS = 2.7 V,
0.4
0.9 34 45 64 3.1 3.8
1.5 55 70 100 4 5
V m
Drain-Source Diode Characteristics and Maximum Ratings
IS V SD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage V ON/OFF = 0 V, IS = -0.6 A
(Note 2)
-0.6 -1.2
A V
Notes: 1. R J A is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R JC is guar anteed by design while R J A is determined by the user's board design. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
FDC6331L Load Switch Application Circuit IN
R1 Q2 C1
OUT
Q1
LOAD
ON/OFF
R2
External Component Recommendation: For additional in-rush current control, R2 and C1 can be added. For more information, see application note AN1030.
FDC6331L Rev D
FDC6331L
0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 1 2 3 IL, (A) 4 5 6 TJ = 25 OC V IN = 1.8V V ON/OFF = 1.5V -8V PW = 300us, D < 2%
0.4 0.35 T J = 125OC V DROP, (V) 0.3 0.25 0.2 0.15 0.1 0.05 0 0 1 2 3 IL, (A) 4 5 6 T J = 25OC TJ = 125 OC V IN = 2.5V V ON/OFF = 1.5V -8V PW = 300us, D < 2%
V DROP, (V)
Figure 1. Conduction Voltage Drop Variation with Load Current.
0.4 0.35 0.3 V DROP, (V) 0.25 0.2 0.15 0.1 0.05 0 0 1 2 3 IL, (A) 4 5 6 TJ = 125 OC V IN = 4.5V V ON/OFF = 1.5V -8V PW = 300us, D < 2% 0.15
Figure 2. Conduction Voltage Drop Variation with Load Current.
Q2
RDS(ON) , ON-RESISTANCE ( ) 0.125 IL = 1A V O N / O F F = 1.5V -8V PW = 300us, D < 2%
0.1
0.075 T J = 125OC 0.05 TJ = 25OC 0.025
TJ = 25OC
0 1 2 3 4 -VGS , GATE TO SOURCE VOLTAGE (V) 5
Figure 3. Conduction Voltage Drop Variation with Load Current.
1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
D = 0.5
Figure 4. On-Resistance Variation With Input Voltage
R JA(t) = r(t) + R JA R JA = 156 C/W P(pk)
0.2 0.1
0.1
t1
0.05 0.02 0.01 SINGLE PULSE
t2 T J - TA = P * R JA(t) Duty Cycle, D = t1/ t2
0.01 0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 5. Transient Thermal Response Curve.
Thermal characterization performed on the conditions described in Note 2. Transient thermal response will change depends on the circuit board design.
FDC6331L Rev D
tm
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Across the board. Around the worldTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM CTLTM Current Transfer LogicTM DOMETM E2CMOSTM EcoSPARK(R) EnSignaTM FACT Quiet SeriesTM FACT(R) FAST(R) FASTrTM FPSTM FRFET(R) GlobalOptoisolatorTM GTOTM HiSeCTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM MICROCOUPLERTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANAR(R) PACMANTM POPTM Power220(R) Power247(R) PowerEdgeTM PowerSaverTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ScalarPumpTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM The Power Franchise(R) TM TinyBoostTM TinyBuckTM
tm
TinyLogic(R) TINYOPTOTM TinyPowerTM TinyWireTM TruTranslationTM SerDesTM UHC(R) UniFETTM VCXTM WireTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information
Product Status Formative or In Design
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I24
(c)2007 Fairchild Semiconductor Corporation www.fairchildsemi.com

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